N-Tip SiC sou Si Substra Konpoze Dia6inch
| 等级Klas | Ou 级 | P级 | D级 |
| Klas BPD ki ba | Pwodiksyon Klas | Klas enbesil | |
| 直径Dyamèt | 150.0 mm ± 0.25mm | ||
| 厚度Epesè | 500 μm ± 25 μm | ||
| 晶片方向Oryantasyon wafer | Aks ki pa ale: 4.0° nan direksyon < 11-20 > ±0.5° pou 4H-N Sou aks: <0001> ±0.5° pou 4H-SI | ||
| 主定位边方向Apatman Prensipal | {10-10}±5.0° | ||
| 主定位边长度Longè Plat Prensipal | 47.5 mm ± 2.5 mm | ||
| 边缘Eksklizyon kwen | 3 milimèt | ||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤15μm / ≤40μm / ≤60μm | ||
| 微管密度和基面位错MPD ak BPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率Rezistivite | ≥1E5 Ω·cm | ||
| 表面粗糙度Aspèrite | Polonè Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | Okenn | Longè kimilatif ≤10mm, longè yon sèl ≤2mm | |
| Fant akòz limyè ki gen gwo entansite | |||
| 六方空洞（强光灯观测）* | Zòn kimilatif ≤1% | Zòn kimilatif ≤5% | |
| Plak egzagonal pa limyè gwo entansite | |||
| 多型(强光灯观测)* | Okenn | Zòn kimilatif ≤5% | |
| Zòn politip pa limyè gwo entansite | |||
| 划痕(强光灯观测)*& | 3 reyur pou 1 × dyamèt wafer la | 5 reyur pou 1 × dyamèt wafer la | |
| Reyur akòz limyè ki gen gwo entansite | longè kimilatif | longè kimilatif | |
| 崩边# Chip kwen | Okenn | 5 otorize, ≤1 mm chak | |
| 表面污染物（强光灯观测） | Okenn | ||
| Kontaminasyon pa limyè ki gen gwo entansite | |||
Dyagram detaye
