Pwodwi yo
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4H-N 8 pous SiC substrate wafer Silisyòm Carbide enbesil rechèch klas 500um epesè
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4H-N/6H-N SiC Wafer Reasearch pwodiksyon egare klas Dia150mm Silisyòm carbure substrate
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8inch 200mm Silisyòm Carbide SiC Wafers 4H-N kalite pwodiksyon klas 500um epesè
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Dia300x1.0mmt Epesè Safi Wafer C-Plane SSP/DSP
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HPSI SiC wafer dia: 3 pous epesè: 350um± 25 µm pou Elektwonik pouvwa
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8 pous SiC Silisyòm carbure wafer 4H-N kalite 0.5mm pwodiksyon klas rechèch klas koutim poli substra
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8 pous 200mm Safi substrate safi wafer mens epesè 1SP 2SP 0.5mm 0.75mm
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Single kristal Al2O3 99.999% Dia200mm safi gauf 1.0mm 0.75mm epesè
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156mm 159mm 6 pous safi wafer pou carrierC-Plane DSP TTV
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C/A/M aks 4 pous safi wafers yon sèl kristal Al2O3, SSP DSP segondè dite safi substra
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3 pous Segondè pite Semi-Izolan (HPSI) SiC wafer 350um enbesil klas Premye klas
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P-type SiC substrate SiC wafer Dia2inch nouvo pwodwi