Pwodwi yo
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Wafer SiC tip P 4H/6H-P 3C-N 6 pous epesè 350 μm ak oryantasyon plat prensipal
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Bra seramik aliminyòm, bra robotik seramik koutim
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Lam koutim Al2O3 99.999% safi transparan rezistan a mete 38 × 4.5 × 0.3mmt
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Lam koutim Al2O3 99.999% safi transparan rezistan a mete 38 × 4.5 × 0.3mmt
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Poud matyè premyè Lilac YAG koulè wouj violèt an stock
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Pwosesis TVG sou wafer kwatz safi BF33, pèsezon wafer vè.
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Kalite Substra Silisyòm Wafer Kristal Single Si N/P Opsyonèl Wafer Silisyòm Carbide
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Substrat konpoze SiC tip N Dia6inch, monokristalin kalite siperyè ak substrat ki ba kalite.
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Semi-Izolan SiC sou Si Substra Konpoze
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Substrat konpoze SiC semi-izolan Dia2inch 4inch 6inch 8inch HPSI
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Ekipman koutim pou bato kristal kwatz pou rezistans tanperati ki wo ak rezistans mete
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Dyamèt ak epesè vid safi sentetik boul monokristal safi a ka Customized.