SiC
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6 nan Silisyòm Carbide 4H-SiC Semi-Izolan Ingot, enbesil Klas
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SiC Ingot 4H kalite Dia 4inch 6inch Epesè 5-10mm Rechèch / Enbesil Klas
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3 pous High Pite (Undoped) Silisyòm Carbide Wafers semi-Izolan Sic Substrates (HPSl)
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Sic Substrate Silisyòm Carbide Wafer 4H-N Kalite Segondè Dite Rezistans Kowozyon Premye Klas Polisaj
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2inch Silisyòm Carbide Wafer 6H-N Kalite Premye Klas Rechèch Klas Enbesil Klas 330μm 430μm Epesè
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2inch Silisyòm carbure substrate 6H-N doub-sided poli dyamèt 50.8mm pwodiksyon klas rechèch klas
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N-Type SiC Substrate konpoze Dia6inch Segondè bon jan kalite monokristalin ak bon jan kalite ba substrat
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Semi-Izolan SiC Substrates konpoze Dia2pous 4pous 6pous 8pous HPSI
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N-Type SiC sou Si Substrate konpoze Dia6inch
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SiC substrate Dia200mm 4H-N ak HPSI Silisyòm carbure
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3inch SiC substrate Pwodiksyon Dia76.2mm 4H-N
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SiC substrate P ak D klas Dia50mm 4H-N 2inch