Substra
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6 pous HPSI SiC substrat wafer Silisyòm Carbide Semi-insulting wafers SiC
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4 pous waf SiC semi-enstale, substrat HPSI SiC, klas pwodiksyon prensipal
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3 pous 76.2mm 4H-Semi SiC substrat wafer Silisyòm Carbide Semi-insulting wafers SiC
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Substra SiC 3 pous Dia76.2mm HPSI Prime Research ak klas Dummy
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4H-semi HPSI 2 pous SiC substrat wafer Pwodiksyon Dummy Rechèch klas
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Gofr SiC 2 pous 6H oswa 4H Substra SiC semi-izolan Dyamèt 50.8mm
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Substrat Safi Elektwòd ak Substrat LED Wafer C-plane
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Dia101.6mm 4 pous M-plane Sapphire Substrates Wafer LED Substrates Epesè 500um
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Dia50.8 × 0.1 / 0.17 / 0.2 / 0.25 / 0.3mmt Substrat wafer safi Epi-ready DSP SSP
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8 pous 200mm Sapphire Wafer Carrier Subsrate 1SP 2SP 0.5mm 0.75mm
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4 pous gwo pite Al2O3 99.999% Safi substrat wafer Dia101.6 × 0.65mmt ak Prensipal Longè Plat
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3 pous 76.2mm 4H-Semi SiC substrat wafer Silisyòm Carbide Semi-insulting wafers SiC