SiC
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2 pous lengote SiC Dia50.8mmx10mmt monokristal 4H-N
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Gofr SiC 4 pous 6H Semi-Izolan SiC Substrates prim, rechèch, ak klas ansekan
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6 pous HPSI SiC substrat wafer Silisyòm Carbide Semi-insulting wafers SiC
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4 pous waf SiC semi-enstale, substrat HPSI SiC, klas pwodiksyon prensipal
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3 pous 76.2mm 4H-Semi SiC substrat wafer Silisyòm Carbide Semi-insulting wafers SiC
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Substra SiC 3 pous Dia76.2mm HPSI Prime Research ak klas Dummy
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4H-semi HPSI 2 pous SiC substrat wafer Pwodiksyon Dummy Rechèch klas
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Gofr SiC 2 pous 6H oswa 4H Substra SiC semi-izolan Dyamèt 50.8mm
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Gofr SiC Silisyòm Carbide 6 pous 150mm tip 4H-N pou rechèch pwodiksyon MOS oswa SBD ak klas Dummy
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Gofr Silisyòm Carbide 2 pous 6H oswa 4H N-type oswa Semi-Izolan SiC Substra
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4H-N 4 pous SiC substrat wafer Silisyòm Carbide Pwodiksyon Dummy Rechèch klas
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8 pous 200mm 4H-N SiC Wafer kondiktif mannken klas rechèch