SiC
-
6 pous SiC Epitaxiy wafer tip N/P aksepte Customized
-
Pwodiksyon ak klas ansekan substrat SiC Dia150mm 4H-N 6 pous
-
Waf SiC Epi 4 pous pou MOS oswa SBD
-
2 pous lengote SiC Dia50.8mmx10mmt monokristal 4H-N
-
200mm SiC substrat klas fictif 4H-N 8 pous waf SiC
-
Gofr SiC 4 pous 6H Semi-Izolan SiC Substrates prim, rechèch, ak klas ansekan
-
6 pous HPSI SiC substrat wafer Silisyòm Carbide Semi-insulting wafers SiC
-
4 pous waf SiC semi-enstale, substrat HPSI SiC, klas pwodiksyon prensipal
-
3 pous 76.2mm 4H-Semi SiC substrat wafer Silisyòm Carbide Semi-insulting wafers SiC
-
Substra SiC 3 pous Dia76.2mm HPSI Prime Research ak klas Dummy
-
4H-semi HPSI 2 pous SiC substrat wafer Pwodiksyon Dummy Rechèch klas
-
Gofr SiC 2 pous 6H oswa 4H Substra SiC semi-izolan Dyamèt 50.8mm